MMBT3904FA document number: ds36016 rev. 1 - 2 1 of 7 www.diodes.com july 2013 ? diodes incorporated MMBT3904FA 40v npn small signal transistor in dfn0806 features ? bv ceo > 40v ? i c = 200ma high collector current ? p d = 435mw power dissipation ? 0.48mm 2 package footprint, 16 times smaller than sot23 ? 0.4mm height package minimizing off-board profile ? complementary pnp type mmbt3906fa ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x2-dfn0806-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau, solderable per mil-std-202, method 208 ? weight: 0.0008 grams (approximate) ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel MMBT3904FA-7b 1n 7 8mm 10,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information 1n = product type marking code top view bar denotes base and emitter side 1n e4 top view device schematic bottom view x2-dfn0806-3 device symbol c e b c e b to p view
MMBT3904FA document number: ds36016 rev. 1 - 2 2 of 7 www.diodes.com july 2013 ? diodes incorporated MMBT3904FA absolute maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v continuous collector current i c 200 ma peak pulse collector current i cm 500 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 435 mw thermal resistance, junction to ambient (note 5) r ? ? c/w thermal resistance, junction to lead (note 6) r ? ? c/w ? operating and storage and temperature range t j , t stg -55 to +150 ? c esd ratings (note 7) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 200 v b notes: 5. for the device mounted on minimum recommended pad layout 1oz copper that is on a singl e-sided 1.6mm fr4 pcb; device i s measured under still air conditions whilst operating in steady state condition. the entire exposed collector pad is attached to the heatsink. 6. thermal resistance from junction to solder-point (on the exposed collector pad). 7. refer to jedec specification jesd22-a114 and jesd22-a115.
MMBT3904FA document number: ds36016 rev. 1 - 2 3 of 7 www.diodes.com july 2013 ? diodes incorporated MMBT3904FA thermal characteristics and derating curves 100m 1 10 10m 100m 100s single pulse t amb =25c v ce(sat) limited 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150 175 200 225 250 275 300 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
MMBT3904FA document number: ds36016 rev. 1 - 2 4 of 7 www.diodes.com july 2013 ? diodes incorporated MMBT3904FA electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min max unit test condition off characteristics collector-base breakdown voltage bv cbo 60 ? v i c = 10 ? a, i e = 0 collector-emitter breakdown voltage (note 8) bv ceo 40 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage bv ebo 6.0 ? v i e = 10 ? a, i c = 0 collector cutoff current i cex ? 50 na v ce = 30v, v eb(off) = 3.0v base cutoff current i bl ? 50 na v ce = 30v, v eb(off) = 3.0v on characteristics (note 8) dc current gain h fe 40 70 100 60 30 ? ? 300 ? ? ? i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 50ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) ? 0.20 0.30 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) 0.65 ? 0.85 0.95 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 8.5 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 10 k ? v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.5 8.0 x 10 -4 small signal current gain h fe 100 400 ? output admittance h oe 1.0 40 s current gain-bandwidth product f t 300 ? mhz v ce = 20v, i c = 10ma, f = 100mhz switching characteristics delay time t d ? 35 ns v cc = 3.0v, i c = 10ma, v be(off) = - 0.5v, i b1 = 1.0ma rise time t r ? 35 ns storage time t s ? 200 ns v cc = 3.0v, i c = 10ma, i b1 = i b2 = 1.0ma fall time t f ? 50 ns note: 8. measured under pulsed conditions. pulse width ? 300s. duty cycle ? 2%.
MMBT3904FA document number: ds36016 rev. 1 - 2 5 of 7 www.diodes.com july 2013 ? diodes incorporated MMBT3904FA typical electrical characteristics (@t a = +25c, unless otherwise specified.) 123456 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 i b = 0.6ma i b = 1.6ma i b = 2ma i b = 1.2ma i b = 0.8ma i b = 0.4ma fig. 4 typical collector current vs. collector-emitter voltage i b = 0.2ma i c , collector current (a) v ce , collector-emitter voltage (v) 110100 0 50 100 150 200 250 300 350 400 t a = 125c v ce = 1v t a = 150c t a = 85c t a = -55c fig. 5 typical dc current gain vs. collector current t a = 25c h fe , dc current gain i c , collector current (ma) 100m 1 10 100 0.01 0.1 t a = 125c i c /i b = 10 t a = 150c t a = 85c t a = -55c fig. 6 typical collector-emitter saturation voltage vs. collector current t a = 25c v ce(sat) , collector-emitter saturation voltage (v) i c , collector current (ma) 100m 1 10 100 0.01 0.1 1 t a = 125c i c /i b = 20 t a = 150c t a = 85c t a = -55c fig. 7 typical collector-emitter saturation voltage vs. collector current t a = 25c v ce(sat) , collector-emitter saturation voltage (v) i c , collector current (ma) 1 10 100 0.4 0.6 0.8 1.0 t a = 85c t a = 150c t a = 125c t a = -55c v ce = 5v t a = 2 5 c fig. 8 typical base-emitter turn on voltage vs. collector current v be(on) , base-emitter turn on voltage (v) i c , collector current (ma) 110100 0.4 0.6 0.8 1.0 t a = 8 5 c t a = 150c t a = 125c t a = -55c gain = 10 t a = 25 c fig. 9 typical base-emitter saturation voltage vs. collector current v be(sat) , base-emitter saturation voltage (v) i c , collector current (ma)
MMBT3904FA document number: ds36016 rev. 1 - 2 6 of 7 www.diodes.com july 2013 ? diodes incorporated MMBT3904FA package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. x2-dfn0806-3 dim min max typ a 0.375 0.40 0.39 a1 0 0.05 0.02 a3 - - 0.10 b 0.10 0.20 0.15 d 0.55 0.65 0.60 d1 0.35 0.45 0.40 e 0.75 0.85 0.80 e1 0.20 0.30 0.25 e - - 0.35 k - - 0.20 l 0.20 0.30 0.25 all dimensions in mm dimensions value (in mm) c 0.350 x 0.200 x1 0.450 x2 0.550 y 0.375 y1 0.475 y2 1.000 x1 x2 y2 y1 y (2x) x (2x) c a a3 seating plane a1 d e b (2x) l (2x) e d1 e1 pin#1 r0.075 k
MMBT3904FA document number: ds36016 rev. 1 - 2 7 of 7 www.diodes.com july 2013 ? diodes incorporated MMBT3904FA important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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